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May 13, 2011 Friday 9:42 AM EST
US Patent Issued on May 10 for "Method of Manufacturing Sub-Micron
Silicon-Carbide Powder" (Armenian, American, Russian Inventors)
ALEXANDRIA, Va.
ALEXANDRIA, Va., May 13 -- United States Patent no. 7,939,044, issued on May 10.
"Method of Manufacturing Sub-Micron Silicon-Carbide Powder" was
invented by Alexander Mukasyan (Granger, Ind.), Vasiliy Mukasyan
(Chernogolovka, Russia), Mikael Nersesyan (St. Louis), Suren Kharatyan
(Yerevan, Armenia) and Hayk Khachatryan (Village Gexarquniq, Armenia).
According to the abstract released by the U.S. Patent & Trademark
Office: "A method of manufacturing a silicon carbide powder with
submicron size of powder particles wherein a homogeneous reactant
mixture comprising a source of silicone, a source of carbon, and
polytetrafluoroethylene is locally preheated in a sealed reaction
chamber filled with an inert gas under pressure of 20 atm to 30 atm to
a temperature sufficient to initiate an exothermic self-propagating
reaction ranges from 650K to 900K. In the aforementioned homogeneous
reactant mixture, the carbon source is used in the amount from 63 wt %
to 68%, the silicon source is used in the amount of from 20 wt. % to
25 wt. %%, and the activated additive is used in the amount of from 8
wt. % to 15 wt. % per 100% of the entire homogeneous reactant
mixture."
The patent was filed on Feb. 11, 2008, under Application No. 12/069,386.
For further information please visit:
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2 FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7939044&O S=7939044&RS=7939044
May 13, 2011 Friday 9:42 AM EST
US Patent Issued on May 10 for "Method of Manufacturing Sub-Micron
Silicon-Carbide Powder" (Armenian, American, Russian Inventors)
ALEXANDRIA, Va.
ALEXANDRIA, Va., May 13 -- United States Patent no. 7,939,044, issued on May 10.
"Method of Manufacturing Sub-Micron Silicon-Carbide Powder" was
invented by Alexander Mukasyan (Granger, Ind.), Vasiliy Mukasyan
(Chernogolovka, Russia), Mikael Nersesyan (St. Louis), Suren Kharatyan
(Yerevan, Armenia) and Hayk Khachatryan (Village Gexarquniq, Armenia).
According to the abstract released by the U.S. Patent & Trademark
Office: "A method of manufacturing a silicon carbide powder with
submicron size of powder particles wherein a homogeneous reactant
mixture comprising a source of silicone, a source of carbon, and
polytetrafluoroethylene is locally preheated in a sealed reaction
chamber filled with an inert gas under pressure of 20 atm to 30 atm to
a temperature sufficient to initiate an exothermic self-propagating
reaction ranges from 650K to 900K. In the aforementioned homogeneous
reactant mixture, the carbon source is used in the amount from 63 wt %
to 68%, the silicon source is used in the amount of from 20 wt. % to
25 wt. %%, and the activated additive is used in the amount of from 8
wt. % to 15 wt. % per 100% of the entire homogeneous reactant
mixture."
The patent was filed on Feb. 11, 2008, under Application No. 12/069,386.
For further information please visit:
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2 FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7939044&O S=7939044&RS=7939044